Enhanced Light Extraction from a GaN-based Light Emitting Diode with Triangle Grating Structure

We propose a simple method to improve the light extraction in GaN based light emitting diode. Conventional light emitting diode has an extraction limitation due to the total internal reflection which occurs at the interface between GaN and air. By using periodic grating etched at the GaN layer, we can couple more emitting light out of the active layer. Tapering the grating structure would facilitate the impedance matching between GaN light emitting diode and air, which can enhance broadband light extraction. We use finite difference time domain method to numerically find the best tapering grating structure. The numerical experiment demonstrate an enhance factor 4 of our proposed structure compared with the conventional one over broad band specctrum.